DRAM DDR3 / DDR4 RDIMM

RDIMM memory (Registered DIMM or ECC REG) is a memory module that has a built-in register in addition to the ECC mechanism. It is used to amplify signals on the system bus between the RAM module and the memory controller.

Key features
  • Available capacities:
    DDR3: 4, 8, 16, 32 GB DDR4: 4, 8, 16, 32, 64 GB
  • DIMM form factor
  • Major-grade memory chips
  • supply voltage
    DDR3: 1.5 V and 1.35 V
    DDR4: 1.2 V
  • frequency:
    DDR3: 1333, 1600, 1866 MHz
    DDR4: 1066, 2133, 2400, 2666 MHz
  • lifetime warranty + technical support
Increased reliability and stability of operation even in a 24/7 mode
Financial savings on server and data center maintenance and equipment
Reduction of energy consumption by up to 20%
Increased efficiency of workstations

Registered memory

The register function allows a stable operation of the system with more modules than usualthan is normally used. Form factor of RDIMM memory differs from standard memory. They are designed to operate in systems where quantity and stability of operation is a key element. In most cases, ECC and ECC REG modules can be used on the same platform, but cannot operate simultaneously.

Stable operations

RDIMM architecture is different from standard consumer-level memory module. This is closely related to their target applications where the key element is the amount of memory and its stability. Most platforms are compatible with both ECC and REG ECC memory, although these two types of memory cannot be used together.

More capacity

Computers support larger volumes of RDIMM memory than of ECC UDIMM.

Capacities

DDR3: 4, 8, 16, 32 GB
DDR4: 4, 8, 16, 32, 64 GB

Memory type

DDR3 / DDR4 RDIMM

Frequency

DDR3: 1066, 1333, 1600, 1866 MHz
DDR4: 2133, 2400, 2666 MHz

Voltage

DDR3: 1.5 V
DDR3: 1.35 V
DDR4: 1.2 V

Latency

CL7, CL9, CL11, CL13, CL15, CL17, CL19

DDR3 RDIMM specifications

ProductVoltageCapacityChips organizationTypeClock
W-MEM1333R3D84G1.5 V4 GB256x8DDR3 ECC REG1333 MHz
W-MEM1333R3D84GLV1.35 V4 GB256x8DDR3 ECC REG1333 MHz
W-MEM1333R3D88G1.5 V8 GB512x8DDR3 ECC REG1333 MHz
W-MEM1333R3D88GLV1.35 V8 GB512×8DDR3 ECC REG1333 MHz
W-MEM1333R3S48G1.5 V8 GB1024x4DDR3 ECC REG1333 MHz
W-MEM1333R3S48GLV1.35 V8 GB1024x4DDR3 ECC REG1333 MHz
W-MEM1333R3D48G1.5 V8 GB512×4DDR3 ECC REG1333 MHz
W-MEM1333R3D48GLV1.35 V8 GB512×4DDR3 ECC REG1333 MHz
W-MEM1333R3D416G1.5 V16 GB1024x4DDR3 ECC REG1333 MHz
W-MEM1333R3D416GLV1.35 V16 GB1024x4DDR3 ECC REG1333 MHz
W-MEM1333R3Q432G1.5 V16 GB1024x4DDR3 ECC REG1333 MHz
W-MEM1333R3Q432GLV1.35 V16 GB1024x4DDR3 ECC REG1333 MHz
W-MEM1600R3D84G1.5 V4 GB256×8DDR3 ECC REG1600 MHz
W-MEM1600R3D84GLV1.35 V4 GB256×8DDR3 ECC REG1600 MHz
W-MEM1600R3D44G1.5 V4 GB256×4DDR3 ECC REG1600 MHz
W-MEM1600R3D44GLV1.35 V4 GB256×4DDR3 ECC REG1600 MHz
W-MEM1600R3S48G1.5 V8 GB1024x4DDR3 ECC REG1600 MHz
W-MEM1600R3S48GLV1.35 V8 GB1024x4DDR3 ECC REG1600 MHz
W-MEM1600R3D48G1.5 V8 GB512x4DDR3 ECC REG1600 MHz
W-MEM1600R3D48GLV1.35 V8 GB512x4DDR3 ECC REG1600 MHz
W-MEM1600R3D416G1.5 V16 GB1024x4DDR3 ECC REG1600 MHz
W-MEM1600R3D416GLV1.35 V16 GB1024x4DDR3 ECC REG1600 MHz
W-MEM1600R3Q432G1.5 V32 GB1024x4DDR3 ECC REG1600 MHz
W-MEM1600R3Q432GLV1.35 V32 GB1024x4DDR3 ECC REG1600 MHz
W-MEM1866R3S48G1.5 V8 GB1024x4DDR3 ECC REG1866 MHz
W-MEM1866R3D88G1.5 V8 GB512x8DDR3 ECC REG1866 MHz

GOODRAM reserves the right to change the specification at any time without prior information.

DDR4 RDIMM specifications

ProductVoltageCapacityChips organizationTypeClock
W-MEM2133R4S84G1.2 V4 GB512x8DDR4 ECC REG2133 MHz
W-MEM2133R4S88G1.2 V8 GB1024x8DDR4 ECC REG2133 MHz
W-MEM2133R4D88G1.2 V8 GB512x8DDR4 ECC REG2133 MHz
W-MEM2133R4D416G1.2 V16 GB1024x4DDR4 ECC REG2133 MHz
W-MEM2133R4D816G1.2 V16 GB1024x8DDR4 ECC REG2133 MHz
W-MEM2133R4D432G1.2 V32 GB2048x4DDR4 ECC REG2133 MHz
W-MEM2133R4Q432G1.2 V32 GB1024x4DDR4 ECC REG2133 MHz
W-MEM2133R4Q464G1.2 V64 GB2048x4DDR4 ECC REG2133 MHz
W-MEM2400R4S84G1.2 V4 GB512x8DDR4 ECC REG2400 MHz
W-MEM2400R4S48G1.2 V8 GB1024x4DDR4 ECC REG2400 MHz
W-MEM2400R4S88G1.2 V8 GB1024x8DDR4 ECC REG2400 MHz
W-MEM2400R4D88G1.2 V8 GB512x8DDR4 ECC REG2400 MHz
W-MEM2400R4D416G1.2 V16 GB1024x4DDR4 ECC REG2400 MHz
W-MEM2400R4D816G1.2 V16 GB1024x8DDR4 ECC REG2400 MHz
W-MEM2400R4D432G1.2 V32 GB2048x4DDR4 ECC REG2400 MHz
W-MEM2400R4Q432G1.2 V32 GB1024x4DDR4 ECC REG2400 MHz
W-MEM2400R4Q464G1.2 V64 GB2048x4DDR4 ECC REG2400 MHz
W-MEM2666R4S88G1.2 V8 GB1024x8DDR4 ECC REG2666 MHz
W-MEM2666R4D88G1.2 V8 GB512x8DDR4 ECC REG2666 MHz
W-MEM2666R4D416G1.2 V16 GB1024x4DDR4 ECC REG2666 MHz
W-MEM2666R4D816G1.2 V16 GB1024x8DDR4 ECC REG2666 MHz
W-MEM2666R4D432G1.2 V32 GB2048x4DDR4 ECC REG2666 MHz
W-MEM2666R4Q432G1.2 V32 GB1024x4DDR4 ECC REG2666 MHz
W-MEM2666R4Q464G1.2 V64 GB2048x4DDR4 ECC REG2666 MHz

GOODRAM reserves the right to change the specification at any time without prior information.

Modern SMT production line,
warehouse and R&D department
located in a factory in Poland.

Implemented AOI/SPI visual inspection procedures of the finished product and application of Burn-in tests, including thermal acceleration process

individual component selection, manufacturing
and RAM validation process for the specific
application of the memory