Flash memory and components

Flash memory

Flash memory – means a type of memory that enables storing or deleting data during one programming operation. It is also a non-volatile memory not loosing stored data after disconnecting the power supply.
The inventor of Flash memory is Japanese Toshiba. This innovative solution was designed by a special team of specialists headed by Fujio Masuoka, PhD, in 1984.

We can distinguish two types of flash memory:

  • NOR type flash memory
  • NAND type flash memory

NOR type flash memory allows direct access to each memory cell with quite long times of storing and deleting data. Its main purpose is to store data not requiring frequent updates. NOR memory offers from 10 to 100 thousands of programming cycles. This memory was applicable in the first CompactFlash memory cards. Next it was replaced by cheaper NAND type flash memory.

Features of NOR memory:

  • supply voltage 1.7-5V*
  • interface: synchronous or parallel *
  • access time: from 45ns*
  • capacity up to 2Gb*
  • operating temperatures: -40C to +105C*
  • data bus width: 1/8/16 bit*
  • type of packaging: TSOP, BGA, TBGA*

*depending on memory type

NAND type flash memory has a considerably shorter time of storing and deleting data and a greater data density as compared with NOR type memory. It is also characterized by a more favourable price to capacity ratio and ten types higher durability. The most important feature of NAND memory is sequential access to data. The first memory card based on NAND flash was Smart Media card. Later it became applied also in other memory cards, such as: Secure Digital, Memory Stick and xD Picture Card. NAND memory was also used in USB flash drives.

Features of NAND memory:

  • supply voltage 1.8, 3.3V*
  • types: SLC, MLC, TLC
  • interface: parallel asynchronous /synchronous, serial for special order *
  • data bus width: 1/8/16 bit*
  • capacity up to 1Tb*
  • type of packaging: TSOP, BGA, TBGA*
  • operating temperatures: -40C to +105C)*

*depending on the type of memory


All products signed with GOODRAM logo are built of top quality components thanks to application of only qualified components in the production process. Our cooperation with TOSHIBA, established in 2008, allows not only supply of high quality components, but also access to the latest technological solutions.

The group of components includes a wide range of electronic memory intended to be assembled in the printed circuit of equipment. This group of memory includes: SRAM, DRAM, EEPROM, FLASH, MCP, eMMC of world’s leading producers, such as: Toshiba, Micron, Samsung. A wide range of memory types allows to cover nearly all popular communication interfaces, types of packaging and hence applications. The components are divided into the ones targeted to commercial and industrial applications – it has direct influence on the scope of operating and storage temperatures of components.